Datasheet4U Logo Datasheet4U.com

BUV20

Silicon NPN Power Transistor

BUV20 General Description


*Low Collector Saturation Voltage- : VCE(sat)= 0.6V(Max.) @IC= 25A
*High DC Current Gain- : hFE= 20(Min.)@ IC= 25A
*High Switching Speed
*Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS
*Designed for high speed, high current, high .

BUV20 Datasheet (207.82 KB)

Preview of BUV20 PDF

Datasheet Details

Part number:

BUV20

Manufacturer:

Inchange Semiconductor

File Size:

207.82 KB

Description:

Silicon npn power transistor.

📁 Related Datasheet

BUV20 NPN Transistor (Motorola Inc)

BUV20 NPN Silicon Power Transistor (ON Semiconductor)

BUV20 HIGH CURRENT NPN SILICON TRANSISTOR (STMicroelectronics)

BUV20 NPN MULTI - EPITAXIAL POWER TRANSISTOR (Seme LAB)

BUV20 SILICON MULTI-EPITAXIAL NPN TRANSISTOR (TT)

BUV21 40 AMPERES NPN SILICON POWER METAL TRANSISTOR (Motorola Inc)

BUV21 NPN Silicon Power Transistor (ON Semiconductor)

BUV21 SILICON POWER TRANSISTOR (SavantIC)

BUV21 NPN Silicon Low Frequency High Power Switching Transistor (ETC)

BUV21 Bipolar NPN Device (Semelab)

TAGS

BUV20 Silicon NPN Power Transistor Inchange Semiconductor

Image Gallery

BUV20 Datasheet Preview Page 2

BUV20 Distributor