BUV20 Silicon NPN Power Transistor

Inchange Semiconductor

Description

isc Silicon NPN Power Transistor .
Low Collector Saturation Voltage- : VCE(sat)= 0. High DC Current Gain- : hFE= 20(Min. High Switching Speed.

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Datasheet Specifications

Part number: BUV20
Manufacturer: Inchange Semiconductor
File Size: 207.82 KB
Datasheet: BUV20-InchangeSemiconductor.pdf
Description: Silicon NPN Power Transistor

Applications

* Designed for high speed, high current, high power applications. Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current-Continuous ICM Collector Current-Peak IB Base Current-Contin

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BUV20 Silicon NPN Power Transistor Inchange Semiconductor

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