BUV51 Silicon NPN Power Transistor

Inchange Semiconductor

Description

isc Silicon NPN Power Transistor BUV51 .
High Current Capability. Low Collector Saturation Voltage- : VCE(sat)= 0. High Switching Speed. Minimum Lot-to-Lot.

📥 Download Datasheet

BUV51 Datasheet Preview — Preview of BUV51 PDF

Datasheet Specifications

Part number: BUV51
Manufacturer: Inchange Semiconductor
File Size: 205.30 KB
Datasheet: BUV51-InchangeSemiconductor.pdf
Description: Silicon NPN Power Transistor

Applications

* Designed for high current, high speed, high power applications. Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER VCEV Collector-Emitter Voltage (VBE= -1.5V) VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current-Continuous ICM Collector Current-Peak IB Bas

BUV51 Distributors

📁 Related Datasheet

BUV50 BUV52A BUV10N BUV11 BUV12 BUV18

📌 All Tags

BUV51 Silicon NPN Power Transistor Inchange Semiconductor

Inchange Semiconductor BUV51-like datasheet