BUV56 Datasheet, Transistor, Inchange Semiconductor

PDF File Details

Part number:

BUV56

Manufacturer:

Inchange Semiconductor

File Size:

209.10kb

Download:

📄 Datasheet

Description:

Silicon npn power transistor. *Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 450V(Min.) *High Speed Switching *Minimum Lot-to-Lot variations for robust device

TAGS

📁 Related Datasheet

BUV50 - NPN Transistor (INCHANGE)
isc Silicon NPN Power Transistor DESCRIPTION ·High Current Capability ·Low Collector Saturation Voltage- : VCE(sat)= 0.8V (Max.) @IC= 10A ·High Switc.

BUV50 - SILICON POWER TRANSISTOR (SavantIC)
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors BUV50 .. DESCRIPTION ·With TO-3 package ·High dielect.

BUV50 - Bipolar NPN Device (Seme LAB)
BUV50 Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) Bipolar NPN D.

BUV51 - Bipolar NPN Device (Seme LAB)
BUV51 Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 6.35 (0.25) 9.15 (0.36) Bipolar NPN .

BUV51 - Silicon NPN Power Transistor (Inchange Semiconductor)
isc Silicon NPN Power Transistor BUV51 DESCRIPTION ·High Current Capability ·Low Collector Saturation Voltage- : VCE(sat)= 0.8V (Max.) @IC= 5A ·High.

BUV52 - Silicon NPN Power Transistor (Inchange Semiconductor)
isc Silicon NPN Power Transistor BUV52 DESCRIPTION ·High Current Capability ·Low Collector Saturation Voltage- : VCE(sat)= 0.8V (Max.) @IC= 4A ·High.

BUV52A - FAST SWITCHING POWER TRANSISTOR (Seme LAB)
BUV52A MECHANICAL DATA Dimensions in mm(inches) 4 0 .0 1 (1 .5 7 5 ) M ax. 2 2 .2 3 (0 .8 7 5 ) M ax. 1 .5 7 (0 .0 6 2 ) 1 .4 7 (0 .0 5 8 ) D ia . .

BUV52A - Silicon NPN Power Transistor (Inchange Semiconductor)
isc Silicon NPN Power Transistor BUV52A DESCRIPTION ·High Current Capability ·Low Collector Saturation Voltage- : VCE(sat)= 0.9V (Max.) @IC= 7A ·Hig.

BUV10 - Silicon NPN Power Transistor (Inchange Semiconductor)
.DataSheet.co.kr INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BUV10 DESCRIPTION ·High Switching Speed ·Hi.

BUV10N - Bipolar NPN Device in a Hermetically sealed TO3 Metal Package (Seme LAB)
BUV10N Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 6.35 (0.25) 9.15 (0.36) Bipolar NPN.