FDB2710 - N-Channel MOSFET Transistor

Inchange Semiconductor

FDB2710 Datasheet Preview — Preview of FDB2710 PDF

Datasheet Details

Part number	FDB2710
Manufacturer	Inchange Semiconductor
File Size	356.48 KB
Description	N-Channel MOSFET Transistor
Datasheet	FDB2710-InchangeSemiconductor.pdf

FDB2710 Product details

Description

motor drive, DC-DC converter, power switch and solenoid drive.ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 250 V VGS Gate-Source Voltage-Continuous ±30 V ID Drain Current-Continuous 50 A IDM Drain Current-Single Pluse 150 A PD Total Dissipation @TC=25℃ 260 W TJ Max.Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junc

Features

Drain Current : ID= 50A@ TC=25℃.
Drain Source Voltage : VDSS= 250V(Min).
Static Drain-Source On-Resistance : RDS(on) = 42.5mΩ(Max).
100% avalanche tested.
Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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Published: Jun 24, 2022 |