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FDB2710

N-Channel MOSFET Transistor

FDB2710 Features

* Drain Current : ID= 50A@ TC=25℃

* Drain Source Voltage : VDSS= 250V(Min)

* Static Drain-Source On-Resistance : RDS(on) = 42.5mΩ(Max)

* 100% avalanche tested

* Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION

* motor drive, DC-DC conv

FDB2710 General Description


*motor drive, DC-DC converter, power switch and solenoid drive. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 250 V VGS Gate-Source Voltage-Continuous ±30 V ID Drain Current-Continuous 50 A IDM Drain Current-Single Pluse 150 A PD To.

FDB2710 Datasheet (356.48 KB)

Preview of FDB2710 PDF

Datasheet Details

Part number:

FDB2710

Manufacturer:

Inchange Semiconductor

File Size:

356.48 KB

Description:

N-channel mosfet transistor.

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FDB2710 N-Channel MOSFET Transistor Inchange Semiconductor

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