FDB2570 - N-Channel MOSFET
FDB2570 Features
* 22 A, 150 V. RDS(ON) = 80 mΩ @ VGS = 10 V RDS(ON) = 90 mΩ @ VGS = 6 V
* Low gate charge (40nC typical)
* Fast switching speed
* High performance trench technology for extremely low RDS(ON)
* 175°C maximum junction temperature rating D D G G D S TO-220 FD
