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FDB2570 - N-Channel MOSFET

Datasheet Summary

Description

This N-Channel MOSFET has been designed specifically for switching on the primary side in the isolated DC/DC converter application.

Any application requiring a 150V MOSFETs with low on-resistance and fast switching will benefit.

Features

  • 22 A, 150 V. RDS(ON) = 80 mΩ @ VGS = 10 V RDS(ON) = 90 mΩ @ VGS = 6 V.
  • Low gate charge (40nC typical).
  • Fast switching speed.
  • High performance trench technology for extremely low RDS(ON).
  • 175°C maximum junction temperature rating D D G G D S TO-220 FDP Series G S TO-263AB FDB Series S Absolute Maximum Ratings Symbol VDSS VGSS ID PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current.
  • Continuous.
  • Pulsed TA=25oC u.

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Datasheet preview – FDB2570

Datasheet Details

Part number FDB2570
Manufacturer Fairchild Semiconductor
File Size 81.70 KB
Description N-Channel MOSFET
Datasheet download datasheet FDB2570 Datasheet
Additional preview pages of the FDB2570 datasheet.

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Full PDF Text Transcription

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FDP2570/FDB2570 August 2001 FDP2570/FDB2570 150V N-Channel PowerTrench MOSFET General Description This N-Channel MOSFET has been designed specifically for switching on the primary side in the isolated DC/DC converter application. Any application requiring a 150V MOSFETs with low on-resistance and fast switching will benefit. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency. Features • 22 A, 150 V.
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