22 A, 150 V. RDS(ON) = 80 mΩ @ VGS = 10 V RDS(ON) = 90 mΩ @ VGS = 6 V.
Low gate charge (40nC typical).
Fast switching speed.
High performance trench technology for extremely low RDS(ON).
175°C maximum junction temperature rating
D
D
G
G D S TO-220
FDP Series
G
S
TO-263AB
FDB Series
S
Absolute Maximum Ratings
Symbol
VDSS VGSS ID PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current.
Continuous.
Pulsed
TA=25oC u.
📁 Related Datasheet
FDB2532-F085 - N-Channel MOSFET (ON Semiconductor)