Datasheet4U Logo Datasheet4U.com

FDB2670 - N-Channel MOSFET

Datasheet Summary

Features

  • 19 A, 200 V. RDS(ON) = 130 m @ VGS = 10 V Low gate charge (27 nC typical) Fast switching speed High performance trench technology for extremely low RDS(ON) High power and current handling capability +0.25.28 -0.2 +0.28.7 -0.2 TO-263 +0.2 4.57+0.1 -0.2 1.27-0.1 Unit: mm +0.11.27 -0.1 +0.22.54 -0.2 15.25-+00..22 5.60 1.27+0.1 -0.1 0.1max 2.54+0.2 -0.2 5.08+0.1 -0.1 0.81+0.1 -0.1 2.54 0.4+0.2 -0.2 1 Gate 2 Drain 3 Source Absolute Maximum Ratings Ta = 25 Parameter Drain to source volta.

📥 Download Datasheet

Datasheet preview – FDB2670

Datasheet Details

Part number FDB2670
Manufacturer Kexin
File Size 47.13 KB
Description N-Channel MOSFET
Datasheet download datasheet FDB2670 Datasheet
Additional preview pages of the FDB2670 datasheet.

📁 Similar Datasheet

  • FDB2670 - N-Channel MOSFET (Fairchild Semiconductor)
  • FDB2614 - N-Channel MOSFET (Fairchild Semiconductor)
  • FDB20AN06A0 - N-Channel PowerTrench MOSFET (Fairchild Semiconductor)
  • FDB24AN06LA0 - N-Channel PowerTrench MOSFET (Fairchild Semiconductor)
  • FDB2532 - N-Channel MOSFET (Fairchild Semiconductor)
  • FDB2532-F085 - N-Channel MOSFET (ON Semiconductor)
  • FDB2532_F085 - N-Channel MOSFET (Fairchild Semiconductor)
  • FDB2552 - N-Channel MOSFET (Fairchild Semiconductor)
  • FDB2552 - 150V 37A N-Channel MOSFET (ON Semiconductor)
  • FDB2552_F085 - N-Channel MOSFET (Fairchild Semiconductor)
Other Datasheets by Kexin

Full PDF Text Transcription

Click to expand full text
SMD Type MOSFET 200V N-Channel PowerTrench MOSFET KDB2670(FDB2670) Features 19 A, 200 V. RDS(ON) = 130 m @ VGS = 10 V Low gate charge (27 nC typical) Fast switching speed High performance trench technology for extremely low RDS(ON) High power and current handling capability +0.25.28 -0.2 +0.28.7 -0.2 TO-263 +0.2 4.57+0.1 -0.2 1.27-0.1 Unit: mm +0.11.27 -0.1 +0.22.54 -0.2 15.25-+00..22 5.60 1.27+0.1 -0.1 0.1max 2.54+0.2 -0.2 5.08+0.1 -0.1 0.81+0.1 -0.1 2.54 0.4+0.2 -0.
Published: |