FDB3632
Kexin
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N-channel mosfet.
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FDB3632 - N-Channel MOSFET
(Fairchild Semiconductor)
FDB3632 / FDP3632 / FDI3632
April 2003
FDB3632 / FDP3632 / FDI3632
N-Channel PowerTrench® MOSFET 100V, 80A, 9mΩ
Features
• r DS(ON) = 7.5mΩ (Typ.), .
FDB3632 - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
·FEATURES ·With TO-263 packaging ·Drain Source Voltage-
: VDSS ≥100V ·Static drain-source on-resistance:
RDS(on) ≤ 9m.
FDB3632 - N-Channel MOSFET
(ON Semiconductor)
MOSFET – Power, N-Channel, POWERTRENCH)
100 V, 80 A, 9 mW
FDH3632, FDP3632, FDB3632
Features
• RDS(ON) = 7.5 mW (Typ.), VGS = 10 V, ID = 80 A • Qg (t.
FDB3632-F085 - N-Channel MOSFET
(ON Semiconductor)
FDB3632-F085
FDB3632-F085
N-Channel PowerTrench® MOSFET 100V, 80A, 9mΩ
Features
• rDS(ON) = 7.5mΩ (Typ.), VGS = 10V, ID = 80A • Qg(tot) = 84nC (Typ.).
FDB3652 - N-Channel MOSFET
(Fairchild Semiconductor)
FDP3652 / FDB3652 — N-Channel PowerTrench® MOSFET
October 2013
FDP3652 / FDB3652
N-Channel PowerTrench® MOSFET
100 V, 61 A, 16 mΩ
Features
Applica.
FDB3652 - N-Channel MOSFET
(Kexin)
SMD Type
MOSFET
N-Channel PowerTrench MOSFET KDB3652 (FDB3652)
Features
rDS(ON) = 14m (Typ.), VGS = 10V, ID = 61A Qg(tot) = 41nC (Typ.), VGS = 10V .
FDB3672 - N-Channel MOSFET
(Kexin)
SMD Type
MOSFET
N-Channel PowerTrench MOSFET KDB3672 (FDB3672)
Features
rDS(ON) =24m (Typ.), VGS = 10V, ID =44A Qg(tot) = 24nC (Typ.), VGS = 10V Lo.
FDB3672 - N-Channel MOSFET
(Fairchild Semiconductor)
FDB3672
July 2004
FDB3672
N-Channel PowerTrench® MOSFET 100V, 44A, 28mΩ
Features
• rDS(ON) = 24mΩ (Typ.), VGS = 10V, ID = 44A • Qg(tot) = 24nC (Typ..
FDB3672-F085 - N-Channel MOSFET
(ON Semiconductor)
ON Semiconductor Is Now
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FDB3672_F085 - N-Channel MOSFET
(Fairchild Semiconductor)
FDB3672_F085 N-Channel PowerTrench® MOSFET
FDB3672_F085
N-Channel PowerTrench® MOSFET 100V, 44A, 28mΩ
Features
• rDS(ON) = 24mΩ (Typ.), VGS = 10V, ID.