FDB3860 - N-Channel MOSFET

Fairchild Semiconductor

FDB3860 Datasheet Preview — Preview of FDB3860 PDF

Datasheet Details

Part number	FDB3860
Manufacturer	Fairchild ↗ Semiconductor
File Size	346.44 KB
Description	N-Channel MOSFET
Datasheet	FDB3860_FairchildSemiconductor.pdf

FDB3860 Product details

Description

This N-Channel MOSFET is rugged gate version of Fairchild Semiconductor‘s advanced Power Trench® process. DC-AC Conversion Synchronous Rectifier D D G S TO-263AB FDB Series G S MOSFET Maximum Ratings TC = 25 °C unless otherwise noted www.DataSheet4U.com Symbol VDS VGS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage Ga

Features

Max rDS(on) = 37 mΩ at VGS = 10 V, ID = 5.9 A.
High performance trench technology for extremely low rDS(on).
100% UIL tested.
RoHS Compliant General.

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Published: Oct 14, 2009 |