Datasheet4U Logo Datasheet4U.com

FDB3682 - N-Channel MOSFET

FDB3682 Description

isc N-Channel MOSFET Transistor *.

FDB3682 Features

* With TO-263 packaging
* Drain Source Voltage- : VDSS ≥ 100V
* Static drain-source on-resistance: RDS(on) ≤ 36mΩ@VGS=10V
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation

FDB3682 Applications

* Power supply
* Switching applications
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 100 V VGSS Gate-Source Voltage ±20 V ID Drain Current-Continuous;@Tc=25℃ 32 A PD Total Dissipation 95 W Tj Operating Junction Temperature

📥 Download Datasheet

Preview of FDB3682 PDF
datasheet Preview Page 2

Datasheet Details

Part number
FDB3682
Manufacturer
INCHANGE
File Size
272.92 KB
Datasheet
FDB3682-INCHANGE.pdf
Description
N-Channel MOSFET

📁 Related Datasheet

  • FDB3632 - N-Channel MOSFET (Fairchild Semiconductor)
  • FDB3632-F085 - N-Channel MOSFET (ON Semiconductor)
  • FDB3652 - N-Channel MOSFET (Fairchild Semiconductor)
  • FDB3672 - N-Channel MOSFET (Kexin)
  • FDB3672-F085 - N-Channel MOSFET (ON Semiconductor)
  • FDB3672_F085 - N-Channel MOSFET (Fairchild Semiconductor)
  • FDB33N25 - N-Channel MOSFET (Fairchild Semiconductor)
  • FDB3502 - MOSFET (Fairchild Semiconductor)

📌 All Tags

N-Channel MOSFET INCHANGE
INCHANGE FDB3682-like datasheet