Part number:
FDB3682
Manufacturer:
INCHANGE
File Size:
272.92 KB
Description:
N-channel mosfet.
* With TO-263 packaging
* Drain Source Voltage- : VDSS ≥ 100V
* Static drain-source on-resistance: RDS(on) ≤ 36mΩ@VGS=10V
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation
* APPLICATIONS
* Power supply
* Switching ap
FDB3682
INCHANGE
272.92 KB
N-channel mosfet.
📁 Related Datasheet
FDB3682 - N-Channel MOSFET
(Fairchild Semiconductor)
FDB3682 / FDP3682
September 2002
FDB3682 / FDP3682
N-Channel PowerTrench® MOSFET 100V, 32A, 36mΩ
Features
• r DS(ON) = 32mΩ (Typ.), VGS = 10V, ID = .
FDB3682 - N-Channel MOSFET
(Kexin)
SMD Type
MOSFET
N-Channel PowerTrench MOSFET KDB3682 (FDB3682)
Features
rDS(ON) =32m (Typ.), VGS = 10V, ID =32A Qg(tot) = 18.5nC (Typ.), VGS = 10V .
FDB3632 - N-Channel MOSFET
(Fairchild Semiconductor)
FDB3632 / FDP3632 / FDI3632
April 2003
FDB3632 / FDP3632 / FDI3632
N-Channel PowerTrench® MOSFET 100V, 80A, 9mΩ
Features
• r DS(ON) = 7.5mΩ (Typ.), .
FDB3632 - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
·FEATURES ·With TO-263 packaging ·Drain Source Voltage-
: VDSS ≥100V ·Static drain-source on-resistance:
RDS(on) ≤ 9m.
FDB3632 - N-Channel MOSFET
(Kexin)
SMD Type
MOSFET
N-Channel PowerTrench MOSFET KDB3632(FDB3632)
Features
rDS(ON) = 7.5m (Typ.), VGS = 10V, ID = 80A Qg(tot) = 84nC (Typ.), VGS = 10V .
FDB3632 - N-Channel MOSFET
(ON Semiconductor)
MOSFET – Power, N-Channel, POWERTRENCH)
100 V, 80 A, 9 mW
FDH3632, FDP3632, FDB3632
Features
• RDS(ON) = 7.5 mW (Typ.), VGS = 10 V, ID = 80 A • Qg (t.
FDB3632-F085 - N-Channel MOSFET
(ON Semiconductor)
FDB3632-F085
FDB3632-F085
N-Channel PowerTrench® MOSFET 100V, 80A, 9mΩ
Features
• rDS(ON) = 7.5mΩ (Typ.), VGS = 10V, ID = 80A • Qg(tot) = 84nC (Typ.).
FDB3652 - N-Channel MOSFET
(Fairchild Semiconductor)
FDP3652 / FDB3652 — N-Channel PowerTrench® MOSFET
October 2013
FDP3652 / FDB3652
N-Channel PowerTrench® MOSFET
100 V, 61 A, 16 mΩ
Features
Applica.