FDB110N15A N-Channel MOSFET

INCHANGE

Description

isc N-Channel MOSFET Transistor *.
Drain Source Voltage : VDSS= 150V(Min). Fast Switching Speed. 100% avalanche tested. Minimum Lot-to-Lot variations for robust device.

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Datasheet Specifications

Part number: FDB110N15A
Manufacturer: INCHANGE
File Size: 255.67 KB
Datasheet: FDB110N15A-INCHANGE.pdf
Description: N-Channel MOSFET

Applications

* Designed for high current, high speed switching, switch mode power supplies. ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 150 V VGS Gate-Source Voltage ±20 V ID Drain Current-continuous@ TC=25℃ 92 A ID(puls) Pulse Drain Current

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FDB110N15A N-Channel MOSFET INCHANGE

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