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FDB42AN15A0 - N-Channel MOSFET

FDB42AN15A0 Description

isc N-Channel MOSFET Transistor *.

FDB42AN15A0 Features

* With TO-263 packaging
* Drain Source Voltage- : VDSS ≥ 150V
* Static drain-source on-resistance: RDS(on) ≤ 42mΩ@VGS=10V
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation

FDB42AN15A0 Applications

* Power supply
* Switching applications
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 150 V VGSS Gate-Source Voltage ±320 V ID Drain Current-Continuous;@Tc=25℃ 35 A PD Total Dissipation 150 W Tj Operating Junction Temperature

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Datasheet Details

Part number
FDB42AN15A0
Manufacturer
INCHANGE
File Size
271.93 KB
Datasheet
FDB42AN15A0-INCHANGE.pdf
Description
N-Channel MOSFET

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N-Channel MOSFET INCHANGE
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