Datasheet Details
- Part number
- FDB4020P
- Manufacturer
- Fairchild Semiconductor
- File Size
- 213.32 KB
- Datasheet
- FDB4020P_FairchildSemiconductor.pdf
- Description
- P-Channel MOSFET
FDB4020P Description
FDP4020P February 1999 PRELIMINARY FDP4020P/FDB4020P P-Channel 2.5V Specified Enhancement Mode Field Effect Transistor General .
This P-Channel low threshold MOSFET has been designed for use as a linear pass element for low voltage outputs.
FDB4020P Features
* -16 A, -20 V. RDS(on) = 0.08 Ω @ VGS = -4.5 V RDS(on) = 0.11 Ω @ VGS = -2.5 V.
* Critical DC electrical parameters specified at elevated temperature.
* High density cell design for extremely low RDS(on).
* TO-220 and TO-263 (D2PAK) package for both through hole and
FDB4020P Applications
* 175°C maximum junction temperature rating. S
G
D
Absolute Maximum Ratings
Symbol
VDSS VGSS ID PD TJ, TSTG RθJC RθJA Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed
TA = 25°C unless otherwise noted
Parameter
FDP4020P
-20 ±8 -16 -48 37.5
FDB4020P
Units
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