FDB4020P Datasheet - Fairchild Semiconductor

FDB4020P, P-Channel MOSFET

FDP4020P February 1999 PRELIMINARY FDP4020P/FDB4020P P-Channel 2.5V Specified Enhancement Mode Field Effect Transistor General Description This P-Ch

Features

* -16 A, -20 V. RDS(on) = 0.08 Ω @ VGS = -4.5 V RDS(on) = 0.11 Ω @ VGS = -2.5 V.
* Critical DC electrical parameters specified at elevated temperature.
* High density cell design for extremely low RDS(on).
* TO-220 and TO-263 (D2PAK) package for both through hole and

Applications

* 175°C maximum junction temperature rating. S G D Absolute Maximum Ratings Symbol VDSS VGSS ID PD TJ, TSTG RθJC RθJA Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed TA = 25°C unless otherwise noted Parameter FDP4020P -20 ±8 -16 -48 37.5 FDB4020P Units

FDB4020P_FairchildSemiconductor.pdf