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FDB3632 - N-Channel MOSFET

FDB3632 Description

isc N-Channel MOSFET Transistor *.

FDB3632 Features

* With TO-263 packaging
* Drain Source Voltage- : VDSS ≥100V
* Static drain-source on-resistance: RDS(on) ≤ 9mΩ@VGS=10V
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation

FDB3632 Applications

* Power supply
* Switching applications
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 100 V VGSS Gate-Source Voltage ±20 V ID Drain Current-Continuous;@Tc=25℃ 80 A PD Total Dissipation 310 W Tj Operating Junction Temperature

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Datasheet Details

Part number
FDB3632
Manufacturer
INCHANGE
File Size
272.59 KB
Datasheet
FDB3632-INCHANGE.pdf
Description
N-Channel MOSFET

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📌 All Tags

N-Channel MOSFET INCHANGE
INCHANGE FDB3632-like datasheet