FDB3632 - N-Channel MOSFET
FDB3632 Features
* r DS(ON) = 7.5mΩ (Typ.), V GS = 10V, ID = 80A
* Qg(tot) = 84nC (Typ.), VGS = 10V
* Low Miller Charge
* Low QRR Body Diode
* UIS Capability (Single Pulse and Repetitive Pulse)
* Qualified to AEC Q101 Formerly developmental type 82784 Applications
