FDB3860 Datasheet | Fairchild Semiconductor

FDB3860 N-Channel Power Trench® MOSFET March 2009 N-Channel Power Trench® MOSFET 100 V, 30 A, 37 mΩ Features - Max r DS(on) = 37 mΩ at VGS = 10 V, ID = 5.9 A - High performance trench technology for extremely low r DS(on) - 100% UIL tested - Ro HS pliant General Description This N-Channel MOSFET is rugged gate version of Fairchild Semiconductor‘s advanced Power Trench® process. This part is tailored for low r DS(on) and low Qg figure of merit, with avalanche ruggedness for a wide range of switching applications. Applications - DC-AC Conversion - Synchronous Rectifier G S TO-263AB FDB Series MOSFET Maximum Ratings TC = 25 °C unless otherwise noted .. Symbol VDS VGS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous (Silicon limited) -Continuous -Pulsed Single Pulse Avalanche Energy Power Dissipation Power Dissipation TC = 25 °C TA = 25 °C (Note 1a) (Note 3) TC = 25 °C TA = 25 °C (Note 1a) Ratings 100 ±20 30 6.4 60 96 71 3.1 -55 to +150 m J W °C A Units V V Operating and Storage Junction Temperature Range Thermal Characteristics RθJC RθJA Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient (Note 1a) 1.75 40 °C/W Package Marking and Ordering Information Device Marking FDB3860 Device FDB3860 Package TO-263AB Reel Size 330 mm Tape Width 24 mm Quantity 800 units ©2009 Fairchild Semiconductor Corporation FDB3860 Rev.C .fairchildsemi. FDB3860 N-Channel Power Trench® MOSFET Electrical Characteristics TJ = 25 °C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics...