Datasheet4U Logo Datasheet4U.com

FDB3860 - N-Channel MOSFET

Description

This N-Channel MOSFET is rugged gate version of Fairchild Semiconductor‘s advanced Power Trench® process.

This part is tailored for low rDS(on) and low Qg figure of merit, with avalanche ruggedness for a wide range of switching applications.

DC-AC Conversion Synchro

Features

  • Max rDS(on) = 37 mΩ at VGS = 10 V, ID = 5.9 A.
  • High performance trench technology for extremely low rDS(on).
  • 100% UIL tested.
  • RoHS Compliant General.

📥 Download Datasheet

Datasheet preview – FDB3860

Datasheet Details

Part number FDB3860
Manufacturer Fairchild Semiconductor
File Size 346.44 KB
Description N-Channel MOSFET
Datasheet download datasheet FDB3860 Datasheet
Additional preview pages of the FDB3860 datasheet.

📁 Similar Datasheet

  • FDB33N25 - N-Channel MOSFET (ON Semiconductor)
  • FDB3632 - N-Channel MOSFET (INCHANGE)
  • FDB3632 - N-Channel MOSFET (Kexin)
  • FDB3632 - 100V 80A N-Channel MOSFET (ON Semiconductor)
  • FDB3632-F085 - N-Channel MOSFET (ON Semiconductor)
  • FDB3652 - N-Channel MOSFET (Kexin)
  • FDB3652 - 100V 61A N-Channel MOSFET (ON Semiconductor)
  • FDB3672 - N-Channel MOSFET (Kexin)
  • FDB3672-F085 - N-Channel MOSFET (ON Semiconductor)
  • FDB3682 - N-Channel MOSFET (INCHANGE)
Other Datasheets by Fairchild Semiconductor

Full PDF Text Transcription

Click to expand full text
FDB3860 N-Channel PowerTrench® MOSFET March 2009 FDB3860 N-Channel PowerTrench® MOSFET 100 V, 30 A, 37 mΩ Features „ Max rDS(on) = 37 mΩ at VGS = 10 V, ID = 5.9 A „ High performance trench technology for extremely low rDS(on) „ 100% UIL tested „ RoHS Compliant General Description This N-Channel MOSFET is rugged gate version of Fairchild Semiconductor‘s advanced Power Trench® process. This part is tailored for low rDS(on) and low Qg figure of merit, with avalanche ruggedness for a wide range of switching applications. Applications „ DC-AC Conversion „ Synchronous Rectifier D D G S TO-263AB FDB Series G S MOSFET Maximum Ratings TC = 25 °C unless otherwise noted www.DataSheet4U.
Published: |