FDB3502 - MOSFET

Product Overview

Fairchild Semiconductor

Datasheet Details

Part number	FDB3502
Manufacturer	Fairchild Semiconductor
File Size	278.96 KB
Description	MOSFET
Datasheet	FDB3502 Datasheet
Additional preview pages of the FDB3502 datasheet.

Product details

Description

Max rDS(on) = 47mΩ at VGS = 10V, ID = 6A 100% UIL Tested RoHS Compliant This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.Application Synchronous rectifier D D G S TO-263AB FDB Series G S MOSFET Maximum Ratings TC = 25°C unless otherwise noted Symbol VDS VGS ID EAS PD TJ, TSTG Parame

Features

General.

📁 Similar Datasheet

FDB3632-F085 - N-Channel MOSFET (ON Semiconductor)
FDB3672 - N-Channel MOSFET (Kexin)
FDB3672-F085 - N-Channel MOSFET (ON Semiconductor)
FDB035AN06A0 - N-Channel MOSFET (INCHANGE)
FDB035N10A - N-Channel MOSFET (ON Semiconductor)
FDB045AN08A0 - N-Channel MOSFET (ON Semiconductor)
FDB045AN08A0-F085 - N-Channel MOSFET (ON Semiconductor)
FDB050AN06A0 - N-Channel MOSFET (ON Semiconductor)

Other Datasheets by Fairchild Semiconductor

FDB33N25 - N-Channel MOSFET
FDB3632 - N-Channel MOSFET
FDB3652 - N-Channel MOSFET
FDB3672_F085 - N-Channel MOSFET
FDB3682 - N-Channel MOSFET
FDB3860 - N-Channel MOSFET

Published: Jan 11, 2017 |