FDB3502
FDB3502 is MOSFET manufactured by Fairchild Semiconductor.
FDB3502 N-Channel Power Trench® MOSFET
May 2008
N-Channel Power Trench® MOSFET
75V, 14A, 47mΩ tm
Features
General Description
- Max rDS(on) = 47mΩ at VGS = 10V, ID = 6A
- 100% UIL Tested
- RoHS pliant
This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.
Application
- Synchronous rectifier
TO-263AB
FDB Series
MOSFET Maximum Ratings TC = 25°C unless otherwise noted
Symbol VDS VGS
EAS PD TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous (Package...
