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FDB3502 - MOSFET

General Description

Max rDS(on) = 47mΩ at VGS = 10V, ID = 6A 100% UIL Tested RoHS Compliant This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior swi

Key Features

  • General.

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FDB3502 N-Channel Power Trench® MOSFET May 2008 FDB3502 N-Channel Power Trench® MOSFET 75V, 14A, 47mΩ tm Features General Description „ Max rDS(on) = 47mΩ at VGS = 10V, ID = 6A „ 100% UIL Tested „ RoHS Compliant This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.