Datasheet Details
| Part number | FDB3502 |
|---|---|
| Manufacturer | Fairchild (now onsemi) |
| File Size | 278.96 KB |
| Description | MOSFET |
| Datasheet | FDB3502-FairchildSemiconductor.pdf |
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Overview: FDB3502 N-Channel Power Trench® MOSFET May 2008 FDB3502 N-Channel Power Trench® MOSFET 75V, 14A, 47mΩ.
| Part number | FDB3502 |
|---|---|
| Manufacturer | Fairchild (now onsemi) |
| File Size | 278.96 KB |
| Description | MOSFET |
| Datasheet | FDB3502-FairchildSemiconductor.pdf |
|
|
|
Max rDS(on) = 47mΩ at VGS = 10V, ID = 6A 100% UIL Tested RoHS Compliant This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.
Application Synchronous rectifier D D G S TO-263AB FDB Series G S MOSFET Maximum Ratings TC = 25°C unless otherwise noted Symbol VDS VGS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous (Package limited) -Continuous (Silicon limited) -Continuous -Pulsed TC = 25°C TC = 25°C TA = 25°C Single Pulse Avalanche Energy Power Dissipation TC = 25°C Power Dissipation TA = 25°C Operating and Storage Junction Temperature Range Thermal Characteristics (Note 1a) (Note 3) (Note 1a)
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