FDB38N30U Datasheet | Fairchild Semiconductor

- N-Channel Uni FETTM Ultra FRFETTM MOSFET November 2013 Features - R DS(on) = N-Channel Uni FETTM Ultra FRFETTM MOSFET 300 V, 38 A, 120 mΩ Description Uni FETTM MOSFET is Fairchild Semicondu ctor’s hig h voltage MOSFET family based on planar stripe and DMOS techn ology. This MOSFET is tailored to r educe on-state r esistance, and to provide be tter switching performance and higher avalanche energy streng th. Uni FET Ultra F RFETTM MOSFET has much superior body diode reverse recovery performance. Its trr is less than 50nsec and the r everse dv/dt immunity is 20V/nsec while normal planar MOSF ETs have over 200 nsec and 4 .5V/nsec respectively. Ther efore Uni FET Ultra FRFET MO SFET can remove additional ponent and improve system r eliability in certain applications that require performance improvement of the MOSFET’s bo dy diode. Th is dev ice family is suitable for switching power co nverter applications su ch as power factor correction (PFC ), flat panel display (FPD) TV power, ATX and electronic lamp ballasts. D D G 120 mΩ (Max.) @ VGS = 10 V, ID = 19 A - Low Gate Charge (Typ. 56 n C) - L ow Crss (Typ. 55 p F) - 100% Avalanche Tested - R o HS pliant Applications - Uninterruptible Power Supply - LCD/LED/PDP TV - AC-DC Power Supply D2-PAK MOSFET Maximum Ratings TC = 25o C unless otherwise noted. Symbol VDSS VGSS ID IDM EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain to Source Voltage Gate to Source Voltage Drain C urrent Drain Current Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25o C) - Derate Above 25o C2 - Continuous (TC = 25o C) - Pulsed - Continuous (TC = 100o C) (Note 1) (Note 2) (Note 1) (Note 1) (Note 3) FDB38N30U 300 ±30 38 22.8 152 722 38 31.3 20 313 .5 -55 to +150 300 Unit V V A A m J A m J V/ns W W/o C o o Operating and Storage Temperature Range Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds Thermal Characteristics Symbo...