Datasheet Details
- Part number
- FDB2614
- Manufacturer
- Fairchild Semiconductor
- File Size
- 0.99 MB
- Datasheet
- FDB2614_FairchildSemiconductor.pdf
- Description
- N-Channel MOSFET
FDB2614 Description
FDB2614 * N-Channel PowerTrench® MOSFET November 2013 FDB2614 N-Channel PowerTrench® MOSFET 200 V, 62 A, 27 mΩ .
This N-Channel MOSFET is producedusing Fairchild Semiconductor’s advanced PowerTrench® process that has been tailored to minimize the on-state resista.
FDB2614 Features
* RDS(on) = 22.9 mΩ ( Typ. )@ VGS = 10 V, ID = 31 A
* High Performance Trench technology for Extremely Low
RDS(on)
* Low Gate Charge
FDB2614 Applications
* Synchronous Rectification
* Battery Protection Circuit
* Motor Drives and Uninterruptible Power Supplies
D
D
G S
D2-PAK
G S
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol
Parameter
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
ID
Drain Cur
📁 Related Datasheet
📌 All Tags
FDB2614 Stock/Price