Datasheet Details
Part number:
FDB2614
Manufacturer:
Fairchild Semiconductor
File Size:
0.99 MB
Description:
N-Channel MOSFET
FDB2614 * N-Channel PowerTrench® MOSFET November 2013 FDB2614 N-Channel PowerTrench® MOSFET 200 V, 62 A, 27 mΩ Features * RDS(on) = 22.9 mΩ ( Typ.)@ VGS = 10 V, ID = 31 A * High Performance Trench technology for Extremely Low RDS(on) * Low Gate Charge * Hig
FDB2614_FairchildSemiconductor.pdf
FDB2614, N-Channel MOSFET
This N-Channel MOSFET is producedusing Fairchild Semiconductor’s advanced PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.
Applications * Synchronous Rectification * Battery Protection Circuit *
FDB2614 Distributor
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