High performance trench technology for extremely low RDS(ON).
High power and current handling capability
D
D
G
G D S TO-220
FDP Series
G
S
TO-263AB
FDB Series
S
Absolute Maximum Ratings
Symbol
VDSS VGSS ID PD dv/dt TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current.
Continuous.
Pulsed
TA=25oC unless otherwise not.
📁 Related Datasheet
FDB2532-F085 - N-Channel MOSFET (ON Semiconductor)