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FDB120N10

N-Channel MOSFET Transistor

FDB120N10 Features

* Drain Current : ID= 74A@ TC=25℃

* Drain Source Voltage : VDSS= 100V(Min)

* Static Drain-Source On-Resistance : RDS(on) = 12mΩ(Max) @ VGS= 10V

* 100% avalanche tested

* Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION

* motor drive, D

FDB120N10 General Description


*motor drive, DC-DC converter, power switch and solenoid drive. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 100 V VGS Gate-Source Voltage-Continuous ±20 V ID Drain Current-Continuous 74 A IDM Drain Current-Single Pluse 296 A PD To.

FDB120N10 Datasheet (356.95 KB)

Preview of FDB120N10 PDF

Datasheet Details

Part number:

FDB120N10

Manufacturer:

Inchange Semiconductor

File Size:

356.95 KB

Description:

N-channel mosfet transistor.

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FDB120N10 N-Channel MOSFET Transistor Inchange Semiconductor

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