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FDB12N50TM

N-Channel MOSFET

FDB12N50TM Features

* RDS(on) = 550 m (Typ.) @ VGS = 10 V, ID = 6 A

* Low Gate Charge (Typ. 22 nC)

* Low Crss (Typ. 12 pF)

* 100% Avalanche Tested

* RoHS Compliant Applications

* Lighting

* Uninterruptible Power Supply

* AC-DC Power Supply D November 201

FDB12N50TM General Description

UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable for switching po.

FDB12N50TM Datasheet (750.09 KB)

Preview of FDB12N50TM PDF

Datasheet Details

Part number:

FDB12N50TM

Manufacturer:

Fairchild Semiconductor

File Size:

750.09 KB

Description:

N-channel mosfet.

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FDB12N50TM N-Channel MOSFET Fairchild Semiconductor

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