FDB110N15A MOSFET

Fairchild Semiconductor

Description

FDB110N15A * N-Channel PowerTrench® MOSFET April 2015 FDB110N15A N-Channel PowerTrench® MOSFET 150 V, 92 A, 11 mΩ .
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advance PowerTrench® process that has been tailored to minimize the on-state resista.

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Datasheet Specifications

Part number: FDB110N15A
Manufacturer: Fairchild Semiconductor
File Size: 653.27 KB
Datasheet: FDB110N15A-FairchildSemiconductor.pdf
Description: MOSFET

Features

* RDS(on) = 9.25 mΩ (Typ. ) @ VGS = 10 V, ID = 92 A
* Fast Switching Speed
* Low Gate Charge
* High Performance Trench Technology for Extremely Low RDS(on)
* High Power and Current Handling Capability

Applications

* Synchronous Rectification for ATX / Server / Telecom PSU
* Battery Protection Circuit
* Motor drives and Uninterruptible Power Supplies
* Micro Solar Inverter D D G S D2-PAK G S Absolute Maximum Ratings TC = 25oC unless otherwise noted. Symbol VDSS VGSS ID IDM

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MOSFET Fairchild Semiconductor

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