FDB12N50F N-Channel MOSFET

Fairchild Semiconductor

Description

FDB12N50F N-Channel MOSFET November 2007 FDB12N50F N-Channel MOSFET, FRFET 500V, 11.5A, 0.7Ω .
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

📥 Download Datasheet

FDB12N50F Datasheet Preview — Preview of FDB12N50F PDF

Datasheet Specifications

Part number: FDB12N50F
Manufacturer: Fairchild Semiconductor
File Size: 633.30 KB
Datasheet: FDB12N50F_FairchildSemiconductor.pdf
Description: N-Channel MOSFET

Features

* RDS(on) = 0.59Ω ( Typ. )@ VGS = 10V, ID = 6A
* Low gate charge ( Typ. 21nC)
* Low Crss ( Typ. 11pF)
* Fast switching
* 100% avalanche tested
* Improve dv/dt capability

FDB12N50F Distributors

📁 Related Datasheet

FDB120N10 FDB101 FDB101S FDB102 FDB102S FDB103

📌 All Tags

FDB12N50F N-Channel MOSFET Fairchild Semiconductor

Fairchild Semiconductor FDB12N50F-like datasheet