FDB120N10
Fairchild Semiconductor
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N-channel mosfet.
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FDB120N10 - N-Channel MOSFET Transistor
(Inchange Semiconductor)
isc N-Channel MOSFET Transistor
FDB120N10
FEATURES ·Drain Current : ID= 74A@ TC=25℃ ·Drain Source Voltage
: VDSS= 100V(Min) ·Static Drain-Source On-.
FDB12N50F - N-Channel MOSFET
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FDB12N50F N-Channel MOSFET
November 2007
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N-Channel MOSFET, FRFET
500V, 11.5A, 0.7Ω Features
• RDS(on) = 0.59Ω ( Typ.)@ VGS = 10V, ID = 6A .
FDB12N50F - N-Channel MOSFET
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FDB12N50F — N-Channel UniFETTM FRFET® MOSFET
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500 V, 11.5 A, 700 m
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FDB12N50TM - N-Channel MOSFET
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FDB101 - Silicon Bridge Rectifiers
(LGE)
FDB101-FDB107
Silicon Bridge Rectifiers
VOLTAGE RANGE: 50 --- 1000 V CURRENT: 1.0 A
6.3± 0.2 8.3± 0.3 8.8± 0.5
Features
Rating to 1000V PRV Surge ov.
FDB101S - Silicon Bridge Rectifiers
(LGE)
FDB101S-FDB107S
Silicon Bridge Rectifiers
VOLTAGE RANGE: 50 --- 1000 V CURRENT: 1.0 A
0.3
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Rating to 1000V PRV Surge overload rating to 30 A.
FDB101S - 1.0 Amp Silicon Bridge Rectifiers
(SeCoS)
Elektronische Bauelemente
FDB101S ~ FDB107S
Voltage 50V ~ 1000V 1.0 Amp Silicon Bridge Rectifiers
RoHS Compliant Product A suffix of “-C” specifies .
FDB102 - Silicon Bridge Rectifiers
(LGE)
FDB101-FDB107
Silicon Bridge Rectifiers
VOLTAGE RANGE: 50 --- 1000 V CURRENT: 1.0 A
6.3± 0.2 8.3± 0.3 8.8± 0.5
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Rating to 1000V PRV Surge ov.
FDB102S - Silicon Bridge Rectifiers
(LGE)
FDB101S-FDB107S
Silicon Bridge Rectifiers
VOLTAGE RANGE: 50 --- 1000 V CURRENT: 1.0 A
0.3
Features
Rating to 1000V PRV Surge overload rating to 30 A.