HG2N60

N-Channel Mosfet Transistor

Inchange Semiconductor

* Drain Current

* ID= 2A@ TC=25℃

* Drain Source Voltage- : VDSS= 600V(Min)

* Static Drain-Source On-Resistance : RDS(on) = 4.5Ω(Max)

* Avalanche Energy Specified

* Fast Switching

* Simple Drive Requirements

* DESCRITION

* High efficiency switch mode power supply. Char

HG2N60

Inchange Semiconductor

132.03 KB

N-channel mosfet transistor.

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HG2N60 N-Channel Mosfet Transistor Inchange Semiconductor

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