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IPB120N10S4-05

N-Channel MOSFET Transistor

IPB120N10S4-05 Features

* Drain Current : ID= 120A@ TC=25℃

* Drain Source Voltage : VDSS= 100V(Min)

* Static Drain-Source On-Resistance : RDS(on) = 5.3mΩ(Max) @VGS=10V

* 100% avalanche tested

* Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION

* motor drive, D

IPB120N10S4-05 General Description


*motor drive, DC-DC converter, power switch and solenoid drive. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 100 V VGS Gate-Source Voltage-Continuous ±20 V ID Drain Current-Continuous 120 A IDM Drain Current-Single Pluse 480 A PD T.

IPB120N10S4-05 Datasheet (356.78 KB)

Preview of IPB120N10S4-05 PDF

Datasheet Details

Part number:

IPB120N10S4-05

Manufacturer:

Inchange Semiconductor

File Size:

356.78 KB

Description:

N-channel mosfet transistor.

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IPB120N10S4-05 N-Channel MOSFET Transistor Inchange Semiconductor

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