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IRF122 - N-Channel MOSFET Transistor

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Description

Drain Current ID=7A@ TC=25℃ Drain Source Voltage- : VDSS= 100V(Min) Static Drain-Source On-Resistance : RDS(on) =0.4Ω(Max) Nanosecond Switching Speeds APPLICATIONS Switching power supplies Motor controls,Inverters and Choppers Audio amplifiers and high energy puls

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Datasheet Details

Part number IRF122
Manufacturer Inchange Semiconductor
File Size 42.48 KB
Description N-Channel MOSFET Transistor
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INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification IRF122 DESCRIPTION ·Drain Current ID=7A@ TC=25℃ ·Drain Source Voltage- : VDSS= 100V(Min) ·Static Drain-Source On-Resistance : RDS(on) =0.4Ω(Max) ·Nanosecond Switching Speeds APPLICATIONS ·Switching power supplies ·Motor controls,Inverters and Choppers ·Audio amplifiers and high energy pulse circuits. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS VGS ID Ptot Tj Tstg Drain-Source Voltage (VGS=0) Gate-Source Voltage 100 ±20 V V Drain Current-continuous@ TC=25℃ 7 A Total Dissipation@TC=25℃ 40 W Max.
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