IRF626 Datasheet, Transistor, Inchange Semiconductor

IRF626 Features

• Transistor
• RDS(on) =1.1Ω
• 3.8A and 275V
• single pulse avalanche energy rated
• SOA is Power- Dissipation Limited
• Linear Transfer Characteristics
• H

PDF File Details

Part number:

IRF626

Manufacturer:

Inchange Semiconductor

File Size:

39.19kb

Download:

📄 Datasheet

Description:

N-channel mosfet transistor.

IRF626 Application

• Applications such as switching power supplies , AC and DC motor controls ,relay and solenoid drivers and other pulse.
• ABSOLUTE MAXIMUM RA

TAGS

IRF626

Inchange Semiconductor

📁 Related Datasheet

IRF620 - N-Channel Mosfet Transistor (Inchange Semiconductor)
INCHANGE Semiconductor isc N-Channel Mosfet Transistor ·FEATURES ·Low RDS(on) ·VGS Rated at ±20V ·Silicon Gate for Fast Switching Speed ·Rugged ·Low D.

IRF620 - N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS (STMicroelectronics)
IRF620 IRF620FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE IRF620 IRF620FI s s s s V DSS 200 V 200 V R DS( on) < 0.8 Ω < 0.8 Ω ID 6A 4.

IRF620 - N-Channel Power MOSFET (Intersil Corporation)
IRF620 Data Sheet June 1999 File Number 1577.3 5.0A, 200V, 0.800 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field .

IRF620 - N-Channel Power MOSFET (Fairchild Semiconductor)
Data Sheet January 2002 IRF620 5.0A, 200V, 0.800 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transi.

IRF620 - Power MOSFET (TRANSYS Electronics)
.. IRF620 Power MOSFET VDSS = 200V, RDS(on) = 0.80 ohm, ID = 5.2 A D G S N Channel Symbol ELECTRICAL CHARACTERISICS at Tj = 25 .

IRF620 - Power MOSFET (Vishay)
.vishay. IRF620 Vishay Siliconix Power MOSFET D TO-220AB S D G G S N-Channel MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg max. (nC) Qgs (.

IRF6201PBF - Power MOSFET (International Rectifier)
PD - 97500A IRF6201PbF VDS RDS(on) max (@VGS = 4.5V) 20 2.45 2.75 130 27 V mΩ mΩ nC A 6 6 6 *    HEXFET® Power MOSFET  ' ' ' ' RDS(on.

IRF620A - N-Channel Mosfet Transistor (Inchange Semiconductor)
INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification IRF620A FEATURES ·Low RDS(on) = 0.626Ω(TYP) ·Lower Input Capacitanc.

IRF620A - Power MOSFET (Fairchild Semiconductor)
Advanced Power MOSFET IRF620A FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extende.

IRF620B - 200V N-Channel MOSFET (Fairchild Semiconductor)
IRF620B/IRFS620B November 2001 IRF620B/IRFS620B 200V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transi.