KSD985 Datasheet - Inchange Semiconductor

KSD985, Silicon NPN Power Transistor

INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor isc Product Specification KSD985 .
Collector. Emitter Breakdown Voltage- : V(BR)CEO = 60V(Min. DC Current Gain- : hFE = 2000(Min) @ IC= 1A. Low Collector Saturatio.

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Datasheet Details

Part number:

KSD985

Manufacturer:

Inchange Semiconductor

File Size:

133.24 KB

Description:

Silicon NPN Power Transistor

Applications

* They are suitable for use to operate from IC without predriver, such as hammer driver. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 150 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 8V IC Collector Current-Continuous

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KSD985 Silicon NPN Power Transistor Inchange Semiconductor

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