KSD1408 Silicon NPN Power Transistor

Inchange Semiconductor

Description

isc Silicon NPN Power Transistor KSD1408 .
Low Collector Saturation Voltage : VCE(sat)= 1. Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V (Min). Complement to.

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Datasheet Specifications

Part number: KSD1408
Manufacturer: Inchange Semiconductor
File Size: 183.92 KB
Datasheet: KSD1408-InchangeSemiconductor.pdf
Description: Silicon NPN Power Transistor

Applications

* Designed for power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 4 A IB Base Current-Continuous PC C

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KSD1408 Silicon NPN Power Transistor Inchange Semiconductor

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