KSD288 Silicon NPN Power Transistor

Inchange Semiconductor

Description

INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification KSD288 .
Collector-Base Breakdown Voltage- : V(BR)CBO= 80V(Min). Collector Current- IC= 3A. Collector Power Dissipation- : PC= 25W@ TC= 25℃ APPLIC.

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Datasheet Specifications

Part number: KSD288
Manufacturer: Inchange Semiconductor
File Size: 134.96 KB
Datasheet: KSD288-InchangeSemiconductor.pdf
Description: Silicon NPN Power Transistor

Applications

* Power regulator
* Low frequency high power amplifier ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 55 V VEBO Emitter-Base Voltage 5V IC Collector Current-Continuous PC Collector Power Dissipation

KSD288 Distributors

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KSD288 Silicon NPN Power Transistor Inchange Semiconductor

Inchange Semiconductor KSD288-like datasheet