KSD2012 - NPN Epitaxial Silicon Transistor
98AON67439E Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
TO *220 FULLPACK, 3 *LEAD / TO *220F *3SG PAGE 1 OF 1 onsemi and are tradema
NPN Epitaxial Silicon Transistor Low Frequency Power Amplifier KSD2012 Complementary to KSB1366 This is a Pb Free Device ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Symbol Parameter Value Unit VCBO Collector Base Voltage 60 V VCEO Collector Emitter Voltage 60 V VEBO Emitter Base Voltage 7 V IC Collector Current 3 A IB Base Current 0.3 A PC Collector Power Dissipation (TC = 25°C) 25 W TJ Junction Temp
