KSD2012 Datasheet - ON Semiconductor

KSD2012 NPN Epitaxial Silicon Transistor

98AON67439E Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. TO *220 FULLPACK, 3 *LEAD / TO *220F *3SG PAGE 1 OF 1 onsemi and are tradema.

NPN Epitaxial Silicon Transistor Low Frequency Power Amplifier KSD2012 Complementary to KSB1366 This is a Pb Free Device ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Symbol Parameter Value Unit VCBO Collector Base Voltage 60 V VCEO Collector Emitter Voltage 60 V VEBO Emitter Base Voltage 7 V IC Collector Current 3 A IB Base Current 0.3 A PC Collector Power Dissipation (TC = 25°C) 25 W TJ Junction Temp.

KSD2012-ONSemiconductor.pdf