NJD1718 Silicon PNP Power Transistor

Inchange Semiconductor

Description

isc Silicon PNP Power Transistor .
Low Collector-Emitter Saturation Voltage- : VCE(sat)= -0. High Switching speed. Minimum Lot-to-Lot variatio.

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Datasheet Specifications

Part number: NJD1718
Manufacturer: Inchange Semiconductor
File Size: 217.38 KB
Datasheet: NJD1718-InchangeSemiconductor.pdf
Description: Silicon PNP Power Transistor

Applications

* Designed for high-gain audio amplifier and power Switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO VCEO VEBO IC ICM IB PC TJ Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak B

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NJD1718 Silicon PNP Power Transistor Inchange Semiconductor

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