Datasheet4U Logo Datasheet4U.com

2SK1217 N-Channel MOSFET Transistor

2SK1217 Description

isc N-Channel MOSFET Transistor .
Drain Current. ID=8A@ TC=25℃. Drain Source Voltage- : VDSS=900V(Min). Fast Switching Speed. Minimum Lot-to-Lot variations for.

2SK1217 Applications

* Designed for high voltage, high speed power switching ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 900 V VGS Gate-Source Voltage ±30 V ID Drain Current-continuous@ TC=25℃ 8 A Ptot Total Dissipation@TC=25℃ 100 W Tj Max. Operati

📥 Download Datasheet

Preview of 2SK1217 PDF
datasheet Preview Page 2

Datasheet Details

Part number
2SK1217
Manufacturer
Inchange Semiconductor
File Size
203.80 KB
Datasheet
2SK1217-InchangeSemiconductor.pdf
Description
N-Channel MOSFET Transistor

📁 Related Datasheet

  • 2SK1217-01R - N-CHANNEL SILICON POWER MOS-FET (Fuji)
  • 2SK121 - Silicon N Channel Junction FET (Sony)
  • 2SK1212-01 - N-CHANNEL SILICON POWER MOS-FET (Fuji)
  • 2SK1212-01R - N-CHANNEL SILICON POWER MOS-FET (Fuji)
  • 2SK1214 - N-CHANNEL SILICON POWER F-MOS FET (Fuji)
  • 2SK1215 - Silicon N-Channel MOSFET (Hitachi Semiconductor)
  • 2SK12 - Silicon N-Channel Transistor (Toshiba)
  • 2SK1204 - Silicon N-Channel MOS FET (Hitachi Semiconductor)

📌 All Tags

N-Channel MOSFET Transistor Inchange Semiconductor
Inchange Semiconductor 2SK1217-like datasheet