IPB120N10S4-05 - N-Channel MOSFET Transistor

Inchange Semiconductor

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Datasheet Details

Part number	IPB120N10S4-05
Manufacturer	Inchange Semiconductor
File Size	356.78 KB
Description	N-Channel MOSFET Transistor
Datasheet	IPB120N10S4-05-InchangeSemiconductor.pdf

IPB120N10S4-05 Product details

Description

motor drive, DC-DC converter, power switch and solenoid drive.ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 100 V VGS Gate-Source Voltage-Continuous ±20 V ID Drain Current-Continuous 120 A IDM Drain Current-Single Pluse 480 A PD Total Dissipation @TC=25℃ 190 W TJ Max.Operating Junction Temperature -55~175 ℃ Tstg Storage Temperature -55~175 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Jun

Features

Drain Current : ID= 120A@ TC=25℃.
Drain Source Voltage : VDSS= 100V(Min).
Static Drain-Source On-Resistance : RDS(on) = 5.3mΩ(Max) @VGS=10V.
100% avalanche tested.
Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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Published: Jun 30, 2022 |