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BAT63-07WE6811 - Silicon Schottky Diode

BAT63-07WE6811 Description

BAT63-07WE6811 Silicon Schottky Diode  Low barrie diode for detectors up to GHz frequencies  For high-speed switching applications  Zero bias dete.

BAT63-07WE6811 Applications

*  Zero bias detector diode BAT63-07W 4 3 D 1 D 2 1 2 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type BAT63-07WE6811 Maximum Ratings Parameter Diode reverse voltage Forward current Total power dissipation TS  103 °C Junction temperature Storage temperature The

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Silicon Schottky Diode Infineon Technologies AG
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