BFP460 Datasheet - Infineon Technologies AG

BFP460, Low Noise Silicon Bipolar RF Transistor

BFP460 Low Noise Silicon Bipolar RF Transistor * General purpose low noise amplifier for low voltage, low current applications * Hig.

Applications

* High ESD robustness, typical 1500 V (HBM)
* Low minimum noise figure 1.1 dB at 1.8 GHz
* High linearity: output compression point OP1dB = 13 dBm @ 3 V, 35 mA, 1.8 GHz
* Pb-free (RoHS compliant) and halogen-free package with visible leads
* Qualification repo

BFP460_InfineonTechnologiesAG.pdf