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BFP460 Low Noise Silicon Bipolar RF Transistor

BFP460 Description

BFP460 Low Noise Silicon Bipolar RF Transistor * General purpose low noise amplifier for low voltage, low current applications * Hig.

BFP460 Applications

* High ESD robustness, typical 1500 V (HBM)
* Low minimum noise figure 1.1 dB at 1.8 GHz
* High linearity: output compression point OP1dB = 13 dBm @ 3 V, 35 mA, 1.8 GHz
* Pb-free (RoHS compliant) and halogen-free package with visible leads
* Qualification repo

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Low Noise Silicon Bipolar Transistor Infineon Technologies AG
Infineon Technologies AG BFP460-like datasheet