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BFR183 - Low Noise Silicon Bipolar RF Transistor

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Part number BFR183
Manufacturer Infineon Technologies AG
File Size 607.75 KB
Description Low Noise Silicon Bipolar RF Transistor
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Low Noise Silicon Bipolar RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA • fT = 8 GHz, NFmin = 0.9 dB at 900 MHz • Pb-free (RoHS compliant) package • Qualification report according to AEC-Q101 available BFR183 ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type BFR183 Marking Pin Configuration RHs 1=B 2=E 3=C Package SOT23 Maximum Ratings at TA = 25 °C, unless otherwise specified Parameter Symbol Value Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation1) TS ≤ 60 °C Junction temperature Storage temperature VCEO VCES VCBO VEBO IC IB Ptot TJ TStg 12 20 20 2 65 5 450 150 -55 ...
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