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Low Noise Silicon Bipolar RF Transistor
• High linearity low noise RF transistor • 22 dBm OP1dB and 31 dBm OIP3
@ 900 MHz, 8 V, 70 mA • For UHF / VHF applications • Driver for multistage amplifiers • For linear broadband and antenna amplifiers • Collector design supports 5 V supply voltage • Pb-free (RoHS compliant) package • Qualification report according to AEC-Q101 available
BFR106
ESD (Electrostatic discharge) sensitive device, observe handling precaution!
Type BFR106
Marking
Pin Configuration
R7s 1=B 2=E 3=C
Package SOT23
Maximum Ratings at TA = 25 °C, unless otherwise specified
Parameter
Symbol
Value
Collector-emitter voltage, TA = 25°C TA = -55°C Collector-emitter voltage Collector-base voltage Emitter-base voltage
Collector current Base current Total power dissipation1)
BFR106 Datasheet
