BFR181 Datasheet (Infineon Technologies AG) - Low Noise Silicon Bipolar RF Transistor

BFR181, Low Noise Silicon Bipolar RF Transistor

Low Noise Silicon Bipolar RF Transistor For low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12 mA fT = 8 GHz, NFmin = 0.9 dB at 900 MHz Pb-free (RoHS compliant) package Qualification report according to AEC-Q101 available BFR181 ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type BFR181 Marking Pin Configuration RFs 1=B 2=E 3=C Package SOT23 Maximum Ratings at TA = 25 °C, unless otherwise