Datasheet4U Logo Datasheet4U.com

BFR193 - Low Noise Silicon Bipolar RF Transistor

📥 Download Datasheet

Datasheet preview – BFR193

Datasheet Details

Part number BFR193
Manufacturer Infineon Technologies AG
File Size 619.03 KB
Description Low Noise Silicon Bipolar RF Transistor
Datasheet download datasheet BFR193 Datasheet
Additional preview pages of the BFR193 datasheet.

📁 Similar Datasheet

  • BFR193 - NPN Silicon RF Transistor (Siemens Semiconductor Group)
  • BFR193F - Low Noise Silicon Bipolar RF Transistor (Infineon)
  • BFR193L3 - NPN Bipolar RF Transistor (Infineon)
  • BFR193T - Silicon NPN Planar RF Transistor (Vishay Telefunken)
  • BFR193TW - Silicon NPN Planar RF Transistor (Vishay Telefunken)
  • BFR193W - NPN Silicon RF Transistor (Siemens Semiconductor Group)
  • BFR19 - NPN Transistor (SGS-ATES)
  • BFR194 - PNP Silicon RF Transistor (Siemens Semiconductor Group)
  • BFR10 - NPN Transistor (SGS-ATES)
  • BFR106 - NPN 5 GHz wideband transistor (NXP)
Other Datasheets by Infineon Technologies AG
  • BFR193T - NPN Silicon RF Transistor
  • BFR193W - Low Noise Silicon Bipolar RF Transistor
  • BFR106 - Low Noise Silicon Bipolar RF Transistor
  • BFR180 - NPN Silicon RF Transistor
  • BFR180W - NPN Silicon RF Transistor
  • BFR181 - Low Noise Silicon Bipolar RF Transistor
  • BFR181T - NPN Silicon RF Transistor
  • BFR181W - Low Noise Silicon Bipolar RF Transistor

Full PDF Text Transcription

Click to expand full text
Low Noise Silicon Bipolar RF Transistor • For low noise, high-gain amplifiers up to 2 GHz • For linear broadband amplifiers • fT = 8 GHz, NFmin = 1 dB at 900 MHz • Pb-free (RoHS compliant) package • Qualification report according to AEC-Q101 available BFR193 ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type BFR193 Marking Pin Configuration RCs 1=B 2=E 3=C Package SOT23 Maximum Ratings at TA = 25 °C, unless otherwise specified Parameter Symbol Value Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation1) TS ≤ 69°C Junction temperature Storage temperature VCEO VCES VCBO VEBO IC IB Ptot TJ TStg 12 20 20 2 80 10 580 150 -55 ...
Published: |