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BFR181T Datasheet - Infineon Technologies AG

BFR181T NPN Silicon RF Transistor

BFR181T NPN Silicon RF Transistor Preliminary data  For low noise, high-gain broadband amplifiers at 3 collector currents from 0.5 mA to 12 mA  fT = 8 GHz F = 1.45 dB at 900 MHz 2 1 VPS05996 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type BFR181T Maximum Ratings Parameter Marking RFs 1=B Pin Configuration 2=E 3=C Symbol VCEO VCES VCBO VEBO IC IB Ptot Tj TA Tstg Package SC75 Value 12 20 20 2 20 2 175 150 mW °C mA Unit V Collector-emitter voltage Colle.

BFR181T Datasheet (70.58 KB)

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Datasheet Details

Part number:

BFR181T

Manufacturer:

Infineon ↗ Technologies AG

File Size:

70.58 KB

Description:

Npn silicon rf transistor.

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