BFR183T Datasheet (Infineon Technologies AG)

BFR183T, NPN Silicon RF Transistor

BFR183T NPN Silicon RF Transistor Preliminary data For low-noise, high-gain broadband amplifiers at 3 collector currents from 2 mA to 30 mA fT = 8 GHz F = 1.2 dB at 900 MHz 2 1 VPS05996 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type BFR183T Maximum Ratings Parameter Marking RHs 1=B Pin Configuration 2=E 3=C Symbol VCEO VCES VCBO VEBO IC IB Ptot Tj TA Tstg Package SC75 Value 12 20 20 2 65 5 250 150 mW °C mA Unit V Collector-emitter voltage Collecto