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BFR949F Datasheet - Infineon Technologies AG

BFR949F NPN Silicon RF Transistor

BFR949F NPN Silicon RF Transistor Preliminary data  For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA  fT = 9 GHz 3 1 2 F = 1 dB at 1 GHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type BFR949F Maximum Ratings Parameter Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation1) TS  93°C Junction temperature Ambient temperatur.

BFR949F Datasheet (100.99 KB)

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Datasheet Details

Part number:

BFR949F

Manufacturer:

Infineon ↗ Technologies AG

File Size:

100.99 KB

Description:

Npn silicon rf transistor.

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BFR949F NPN Silicon Transistor Infineon Technologies AG

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