BFR949L3 Datasheet (Infineon Technologies AG)

BFR949L3, NPN Silicon RF Transistor

BFR949L3 NPN Silicon RF Transistor Preliminary data For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA fT = 9 GHz F = 1.0 dB at 1 GHz 3 1 2 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type BFR949L3 Maximum Ratings Parameter Marking RK 1=B Pin Configuration 2=E 3=C Package TSLP-3-1 Symbol VCEO VCES VCBO VEBO IC IB Ptot Tj TA Tstg Value 10 20 20 1.5 35 4 250 150 -65 150 -65 150 Unit V Collector-emitter voltage C