BFY183 Datasheet, Transistor, Infineon Technologies AG

BFY183 Features

• Transistor 4
• For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA
• Hermetically sealed microwave package
• fT= 8GHz F = 2.3 dB at

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Part number:

BFY183

Manufacturer:

Infineon ↗ Technologies AG

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388.31kb

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📄 Datasheet

Description:

Hirel npn silicon rf transistor. ESD: Electrostatic discharge sensitive device, observe handling precautions! Table 1 Product information Type Comment Pin Config

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BFY183

Infineon Technologies AG

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