Part number:
BFY183
Manufacturer:
Infineon ↗ Technologies AG
File Size:
388.31 KB
Description:
Hirel npn silicon rf transistor.
* 4
* For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA
* Hermetically sealed microwave package
* fT= 8GHz F = 2.3 dB at 2 GHz 1 Product validation
* Space Qualified ESCC Detail Spec. No.: 5611/006 Type Variant No. 05 Description ESD: E
BFY183
Infineon ↗ Technologies AG
388.31 KB
Hirel npn silicon rf transistor.
📁 Related Datasheet
BFY180 HiRel NPN Silicon RF Transistor (HiRel Discrete and Microwave Semiconductor For low power amplifiers at collector currents from 0.2 to 2.5 mA) (Siemens Semiconductor Group)
BFY180 HiRel NPN Silicon RF Transistor (Infineon Technologies AG)
BFY181 HiRel NPN Silicon RF Transistor (HiRel Discrete and Microwave Semiconductor) (Siemens Semiconductor Group)
BFY181 HiRel NPN Silicon RF Transistor (Infineon Technologies AG)
BFY182 HiRel NPN Silicon RF Transistor (HiRel Discrete and Microwave Semiconductor) (Siemens Semiconductor Group)
BFY182 HiRel NPN Silicon RF Transistor (Infineon Technologies AG)
BFY183 HiRel NPN Silicon RF Transistor (Siemens Semiconductor Group)
BFY193 HiRel NPN Silicon RF Transistor (HiRel Discrete and Microwave Semiconductor For low noise/ high gain broadband amplifiers up to 2 GHz.) (Siemens Semiconductor Group)
BFY193 HiRel NPN Silicon RF Transistor (Infineon Technologies AG)
BFY196 HiRel NPN Silicon RF Transistor (HiRel Discrete and Microwave Semiconductor For low noise/ high gain amplifiers up to 2 GHz.) (Siemens Semiconductor Group)