PTF080901E Datasheet, Mhz, Infineon Technologies AG

PTF080901E Features

• Mhz
• Broadband internal matching Typical EDGE performance - Average output power = 45 W - Gain = 18 dB - Efficiency = 40% Typical CW performance - Output power at P
  &n

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Part number:

PTF080901E

Manufacturer:

Infineon ↗ Technologies AG

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📄 Datasheet

Description:

Ldmos rf power field effect transistor 90 w/ 869-960 mhz. The PTF080901 is a 90 W, internally matched GOLDMOS FET intended for EDGE and CDMA applications in the 860 to 960 MHz band. Full gold

PTF080901E Application

• Applications in the 860 to 960 MHz band. Full gold metallization ensures excellent device lifetime and reliability. Features
• Br

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PTF080901E

Infineon Technologies AG

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