Part number:
PTF080901E
Manufacturer:
Infineon ↗ Technologies AG
File Size:
205.95 KB
Description:
Ldmos rf power field effect transistor 90 w/ 869-960 mhz.
PTF080901E Datasheet (205.95 KB)
* Broadband internal matching Typical EDGE performance - Average output power = 45 W - Gain = 18 dB - Efficiency = 40% Typical CW performance - Output power at P
* 1dB = 120 W - Gain = 17 dB - Efficiency = 60% Integrated ESD protection: Human Body Model, Class 1 (minimum) Exc
PTF080901E Datasheet (205.95 KB)
PTF080901E
Infineon ↗ Technologies AG
205.95 KB
Ldmos rf power field effect transistor 90 w/ 869-960 mhz.
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