Datasheet4U Logo Datasheet4U.com

PTF080901E - LDMOS RF Power Field Effect Transistor 90 W/ 869-960 MHz

PTF080901E Description

PTF080901 LDMOS RF Power Field Effect Transistor 90 W, 869 *960 MHz .
The PTF080901 is a 90 W, internally matched GOLDMOS FET intended for EDGE and CDMA applications in the 860 to 960 MHz band.

PTF080901E Features

* Broadband internal matching Typical EDGE performance - Average output power = 45 W - Gain = 18 dB - Efficiency = 40% Typical CW performance - Output power at P
* 1dB = 120 W - Gain = 17 dB - Efficiency = 60% Integrated ESD protection: Human Body Model, Class 1 (minimum) Exc

📥 Download Datasheet

Preview of PTF080901E PDF
datasheet Preview Page 2 datasheet Preview Page 3

📁 Related Datasheet

  • PTF08A-E - Relay (Omron)
  • PTF - Metal Film Resistors (Vishay)
  • PTF10007 - 35 Watts/ 1.0 GHz GOLDMOS Field Effect Transistor (Ericsson)
  • PTF10009 - 85 Watts/ 1.0 GHz GOLDMOS Field Effect Transistor (Ericsson)
  • PTF10015 - 50 Watts/ 300-960 MHz GOLDMOS Field Effect Transistor (Ericsson)
  • PTF10019 - 70 Watts/ 860-960 MHz GOLDMOS Field Effect Transistor (Ericsson)
  • PTF10020 - 125 Watts/ 860-960 MHz GOLDMOS Field Effect Transistor (Ericsson)
  • PTF10021 - 30 Watts/ 1.4-1.6 GHz GOLDMOS Field Effect Transistor (Ericsson)

📌 All Tags

LDMOS Power Field Effect Transistor 869-960 MHz Infineon Technologies AG
Infineon Technologies AG PTF080901E-like datasheet