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PTF080901

Manufacturer: Infineon

PTF080901 datasheet by Infineon.

PTF080901 datasheet preview

PTF080901 Datasheet Details

Part number PTF080901
Datasheet PTF080901_InfineonTechnologiesAG.pdf
File Size 205.95 KB
Manufacturer Infineon
Description LDMOS RF Power Field Effect Transistor 90 W/ 869-960 MHz
PTF080901 page 2 PTF080901 page 3

PTF080901 Overview

The PTF080901 is a 90 W, internally matched GOLDMOS FET intended for EDGE and CDMA applications in the 860 to 960 MHz band. Full gold metallization ensures excellent device lifetime and reliability.

PTF080901 Key Features

  • Broadband internal matching Typical EDGE performance
  • Average output power = 45 W
  • Gain = 18 dB
  • Efficiency = 40% Typical CW performance
  • Output power at P-1dB = 120 W
  • Gain = 17 dB
  • Efficiency = 60% Integrated ESD protection: Human Body Model, Class 1 (minimum) Excellent thermal stability Low HCI drif
  • Modulation Spectrum (dB)
  • 0.1 3.2
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More Datasheets from Infineon

View all Infineon datasheets

Part Number Description
PTF080901E LDMOS RF Power Field Effect Transistor 90 W/ 869-960 MHz
PTF080901F LDMOS RF Power Field Effect Transistor 90 W/ 869-960 MHz
PTF080101 LDMOS RF POWER FIELD EFFECT TRANSISTOR 10W/ 860-960MHZ
PTF080101S LDMOS RF POWER FIELD EFFECT TRANSISTOR 10W/ 860-960MHZ
PTF080451 LDMOS RF Power Field Effect Transistor 45 W/ 869-960 MHz
PTF080451E LDMOS RF Power Field Effect Transistor 45 W/ 869-960 MHz
PTF080601 LDMOS RF Power Field Effect Transistor 60 W/ 860-960 MHz
PTF080601A LDMOS RF Power Field Effect Transistor 60 W/ 860-960 MHz
PTF080601E LDMOS RF Power Field Effect Transistor 60 W/ 860-960 MHz
PTF080601F LDMOS RF Power Field Effect Transistor 60 W/ 860-960 MHz

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