PTF080901E Datasheet Ldmos Rf Power Field Effect Transistor 90 W/ 869-960 Mhz

Manufacturer: Infineon

Overview: PTF080901 LDMOS RF Power Field Effect Transistor 90 W, 869–960.

Datasheet Details

Part number	PTF080901E
Manufacturer	Infineon
File Size	205.95 KB
Description	LDMOS RF Power Field Effect Transistor 90 W/ 869-960 MHz
Datasheet	PTF080901E_InfineonTechnologiesAG.pdf

The PTF080901 is a 90 W, internally matched GOLDMOS FET intended for EDGE and CDMA applications in the 860 to 960 MHz band.

Full gold metallization ensures excellent device lifetime and reliability.

Broadband internal matching Typical EDGE performance - Average output power = 45 W - Gain = 18 dB - Efficiency = 40% Typical CW performance - Output power at P.
1dB = 120 W - Gain = 17 dB - Efficiency = 60% Integrated ESD protection: Human Body Model, Class 1 (minimum) Excellent thermal stability Low HCI drift Capable of handling 10:1 VSWR @ 28 V, 90 W (CW) output power EDGE Modulation Spectrum Performance VDD = 28 V, IDQ = 700 mA, f = 959.8 MHz 0 55 Efficiency 50 45.

Part Number	Description
PTF080901	LDMOS RF Power Field Effect Transistor 90 W/ 869-960 MHz
PTF080901F	LDMOS RF Power Field Effect Transistor 90 W/ 869-960 MHz
PTF080101	LDMOS RF POWER FIELD EFFECT TRANSISTOR 10W/ 860-960MHZ
PTF080101S	LDMOS RF POWER FIELD EFFECT TRANSISTOR 10W/ 860-960MHZ
PTF080451	LDMOS RF Power Field Effect Transistor 45 W/ 869-960 MHz
PTF080451E	LDMOS RF Power Field Effect Transistor 45 W/ 869-960 MHz
PTF080601	LDMOS RF Power Field Effect Transistor 60 W/ 860-960 MHz
PTF080601A	LDMOS RF Power Field Effect Transistor 60 W/ 860-960 MHz
PTF080601E	LDMOS RF Power Field Effect Transistor 60 W/ 860-960 MHz
PTF080601F	LDMOS RF Power Field Effect Transistor 60 W/ 860-960 MHz