PTF080901F
Description
The PTF080901 is a 90 W, internally matched GOLDMOS FET intended for EDGE and CDMA applications in the 860 to 960 MHz band. Full gold metallization ensures excellent device lifetime and reliability.
Features
- - Broadband internal matching Typical EDGE performance
- Average output power = 45 W
- Gain = 18 d B
- Efficiency = 40% Typical CW performance
- Output power at P- 1d B = 120 W
- Gain = 17 d B
- Efficiency = 60% Integrated ESD protection: Human Body Model, Class 1 (minimum) Excellent thermal stability Low HCI drift Capable of handling 10:1 VSWR @ 28 V, 90 W (CW) output power
EDGE Modulation Spectrum Performance
VDD = 28 V, IDQ = 700 m A, f = 959.8 MHz
0 55 Efficiency 50 45 40 35 30 400 k Hz 25 20 600 k Hz 36 38 40 42 44 46 48 50 15 10 -10 -20 -30 -40 -50 -60 -70 -80 -90
- Modulation Spectrum (d B)
Drain Efficiency (%)
- -
- -
PTF080901E Package 30248
Output Power (d Bm)
PTF080901F Package 31248 ESD: Electrostatic discharge sensitive device- observe handling...
